Browsing Department of Electrical Engineering by Author "Ali, Muhammad Yusuf"
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Effect of sulfur passivation of silicon „100… on Schottky barrier height: Surface states versus surface dipole
Tao, Meng; Ali, Muhammad Yusuf (AIPDepartment of Electrical Engineering, 2007-05-21)Aluminum and nickel contacts were prepared by evaporation on sulfur-passivated n- and p-type Si(100) substrates. The Schottky diodes were characterized by current-voltage, capacitance-voltage, and activation-energy ... -
Passivation Of Si (100) Surface And Fabrication Of Doping-free MOSFET
Ali, Muhammad Yusuf (Electrical Engineering, 2008-09-17)Chalcogen atoms have been successfully used for the passivation of GaAs(100) as well as Ge(100) and Si(100) substrates. Unlike GaAs(100) and Ge(100), the native oxide(SiO2) of Si(100) substrate is not soluble in ammonium ...