PARAMETRIC STUDY OF AN IGBT COLD PLATE AND AFFECT OF DEVICE LEVEL MODELLING ON SYSTEM LEVEL THERMAL PREDICTIONS
Date
2016-02-29Author
Kadaba Nagaraja Urs, Abhishek Raj Urs
0000-0001-6924-081X
Metadata
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In power electronics, as there is continuous increase in performance of the electronic devices, simultaneously the size of the components used in these devices keep on decreasing. This has resulted in increased power densities and the requirements for excellent cooling as well in order to avoid the failure of those devices. Traditionally, while designing a cooling system for a device, uniform heat flux is assumed throughout the components. In many cases this method may not be accurate for a particular model design. There are chances that the heat flux distribution around the components are non-uniform and requires a more accurate device level modelling and analysis of the system.
Since the technology is continuously improving with high power, high density electronics, it is necessary to understand the thermal stack up of the component system to avoid thermal failures. The work presented highlights the affect of device level modelling of a semi-conductor device used in power electronics. Detailed thermal analysis considering uniform flux and device level model have been performed on an Insulated Gate Bi-Polar Transistor [IGBT].