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    • Thermal stability of ohmic contacts between Ti and Se-passivated n-type Si(001) 

      Tao, Meng; Xu, Yuqing; Kirk, Wiley P.; Maldonado, Eduardo; Udeshi, Darshak (AIPDepartment of Electrical Engineering, NanoFAB Center, University of Texas at ArlingtonTexas Instruments, 2004-01-26)
      The thermal stability of the interface between Ti and Se-passivated n-type Si(001) is investigated. As-deposited Ti contacts show ohmic characteristics. After annealing at temperatures from 200 °C to 480 °C in air, the ...